Calculation of the Range of Medium-Energy F, Cs, and Ga Ions in Silicon Carbide

Abstract

We present simulation results for the implantation of fast F, Cs, and Ga ions into amorphous SiC using a technique that we developed in a previous work.Bragg's rule is employed to calculate the electronic and nuclear stopping powers in the compound. To find ion ranges, numerical solution of the first-order ODE have been performed by using Fehlberg fourth- and fifth-order Runge-Kutta method. The results are compared with experimental data, as well as with the result of the Monte Carlo program SRIM and other standard procedures such as PRAL.It is found that the agreement between our method and the literature is good.